Udemy - Undergraduate course on semiconductor device Physics-II

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Udemy - Undergraduate course on semiconductor device Physics-II (Size: 2.9 GB)
  1 - Lesson-01 MOS Introduction.mp4 103.7 MB
  10 - Lesson-10.mp4 222.5 MB
  11 - Lesson-11.mp4 256.2 MB
  12 - Lesson-12.mp4 153.1 MB
  13 - Lesson-13.mp4 147.6 MB
  14 - Lesson-14.mp4 239.1 MB
  15 - Lesson-15.mp4 203.5 MB
  16 - Lesson-16.mp4 91 MB
  17 - Lesson-17.mp4 100.4 MB
  18 - Lesson-18.mp4 112.4 MB
  2 - Lesson-02.mp4 121.8 MB
  3 - Lesson-03.mp4 158.8 MB
  4 - Lesson-04.mp4 220.6 MB
  5 - Lesson-05.mp4 245.6 MB
  6 - Lesson-06.mp4 76.6 MB
  7 - Lesson-07.mp4 126.1 MB
  8 - Lesson-08.mp4 132.4 MB
  9 - Lesson-09.mp4 269 MB
  Bonus Resources.txt 307.2 B
  Get Bonus Downloads Here.url 204.8 B
  ▲ 20 total files

Description


Undergraduate course on semiconductor device Physics-II
https://TutPig.com

MP4 | Video: h264, 1280x720 | Audio: AAC, 44.1 KHz
Language: English | Size: 2.91 GB | Duration: 2h 12m
Quantitative & Qualitative analysis of MOS capacitor, MOSFET and BJT
What you'll learn
MOS Capacitor quantitative analysis
MOSFET quantitative and Qualitative treatment
BJT analysis
Mathematical understanding
Requirements
My previous course- "Undergraduate course on semiconductor device physics-II"
Description
This is an undergraduate course on semiconductor device physics. This course is the second part in a series of two courses on semiconductor device physics.

For any electronics student understanding transport phenomena of charge carriers, drift current, diffusion current, energy band theory of semiconductors, electron hole pairs(EHPs), Junction formation in a diode, extending the device physics to three terminal devices like BJT and MOSFET is necessary.

My previous course "undergraduate course on semiconductor device physics-I" is a prerequisite for complete understanding of this course.

Metal-Oxide-Semiconductor combination forms a capacitor and that capacitive action is to be understood well in terms of threshold voltage, CV characteristics. Though our major focus is on ideal MOS capacitor, non-idealities are also discussed up to some extent.